| Li–N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method |
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| 引用本文： | 谢建生,陈强.Li–N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method[J].中国物理 B,2014(9):461-465. |
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| 作者姓名： | 谢建生 陈强 |
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| 作者单位： | Functional Materials Laboratory,Changzhou University |
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| 摘 要： | Li–N dual-doped ZnO films ZnO:(Li,N)] with Li doping concentrations of 3 at.%–5 at.% were grown on a glass substrate using an ion beam enhanced deposition(IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO:(Li,N) films exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site(LiZn) acceptor. N doping in ZnO can forms the Lii–NOcomplex, which depresses the compensation of Li occupy interstitial site(Lii) donors for LiZnacceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak(381 nm) is due to the shallow acceptors LiZnin the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.
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| 关 键 词： | ZnO ion beam enhanced deposition photoluminescence |
Li-N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method |
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| Xie Jian-Sheng,Chen Qiang.Li-N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method[J].Chinese Physics B,2014(9):461-465. |
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| Authors: | Xie Jian-Sheng Chen Qiang |
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| Abstract: | ZnO, ion beam enhanced deposition, photoluminescence |
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| Keywords: | ZnO ion beam enhanced deposition photoluminescence |
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