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Magnetic properties of Mn-doped GaN with defects:ab-initio calculations
作者姓名:E. Salmani  A. Benyoussef  H. Ez-Zahraouy  E. H. Saidi
作者单位:LMPHE,Departement de Physique,Facult’e des Sciences,Universit’e Mohammed V-Agdal,Rabat,Morocco LPHE,Departement de Physique,Facult’e des Sciences,Universit’e Mohammed V-Agdal,Rabat,Morocco
摘    要:According to first-principles density functional calculations,we have investigated the magnetic properties of Mn-doped GaN with defects,Ga 1-x-y V Gx Mn y N 1-z-t V Nz O t with Mn substituted at Ga sites,nitrogen vacancies V N,gallium vacancies V G and oxygen substituted at nitrogen sites.The magnetic interaction in Mn-doped GaN favours the ferromagnetic coupling via the double exchange mechanism.The ground state is found to be well described by a model based on a Mn 3+-d 5 in a high spin state coupled via a double exchange to a partially delocalized hole accommodated in the 2p states of neighbouring nitrogen ions.The effect of defects on ferromagnetic coupling is investigated.It is found that in the presence of donor defects,such as oxygen substituted at nitrogen sites,nitrogen vacancy antiferromagnetic interactions appear,while in the case of Ga vacancies,the interactions remain ferromagnetic;in the case of acceptor defects like Mg and Zn codoping,ferromagnetism is stabilized.The formation energies of these defects are computed.Furthermore,the half-metallic behaviours appear in some studied compounds.

关 键 词:diluted  magnetic  semiconductor  GaN:Mn  defects  ab-initio  magnetic  properties
收稿时间:2010-10-24

Magnetic properties of Mn-doped GaN with defects: ab-initio calculations
E. Salmani,A. Benyoussef,H. Ez-Zahraouy,E. H. Saidi.Magnetic properties of Mn-doped GaN with defects:ab-initio calculations[J].Chinese Physics B,2011,20(8):86601-086601.
Authors:E Salmani  A Benyoussef  H Ez-Zahraouy and E H Saidi
Institution:LMPHE, Departement de Physique, Faculté des Sciences, Université Mohammed V-Agdal, Rabat, Morocco;LMPHE, Departement de Physique, Faculté des Sciences, Université Mohammed V-Agdal, Rabat, Morocco;LMPHE, Departement de Physique, Faculté des Sciences, Université Mohammed V-Agdal, Rabat, Morocco;LPHE, Departement de Physique, Faculté des Sciences, Université Mohammed V-Agdal, Rabat, Morocco
Abstract:According to first-principles density functional calculations, we have investigated the magnetic properties of Mn-doped GaN with defects, Ga1-x-yVGxMny N1-z-tVNzOt with Mn substituted at Ga sites, nitrogen vacancies VN, gallium vacancies VG and oxygen substituted at nitrogen sites. The magnetic interaction in Mn-doped GaN favours the ferromagnetic coupling via the double exchange mechanism. The ground state is found to be well described by a model based on a Mn3+—d5 in a high spin state coupled via a double exchange to a partially delocalized hole accommodated in the 2p states of neighbouring nitrogen ions. The effect of defects on ferromagnetic coupling is investigated. It is found that in the presence of donor defects, such as oxygen substituted at nitrogen sites, nitrogen vacancy antiferromagnetic interactions appear, while in the case of Ga vacancies, the interactions remain ferromagnetic; in the case of acceptor defects like Mg and Zn codoping, ferromagnetism is stabilized. The formation energies of these defects are computed. Furthermore, the half-metallic behaviours appear in some studied compounds.
Keywords:diluted magnetic semiconductor  GaN:Mn  defects  ab-initio  magnetic properties
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