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Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators |
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| Authors: | Zhang Yun-Xiao Liao Zai-Yi Zhao Ling-Juan Pan Jiao-Qing Zhu Hong-Liang and Wang Wei |
| Institution: | Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 Ω thin-film resistor and a bypass capacitor integrated on a chip. |
| Keywords: | electroabsorption modulator intra-step quantum wells uni-traveling-carrier RF-gain |
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