Abstract: | A gate-to-body tunneling current model for silicon-on-insulator(SOI) devices is simulated.As verified by the measured data,the model,considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect,provides a better prediction of the tunneling current and gate-induced floating body effect than the BSIMSOI4model.A delayed gate-induced floating body effect is also predicted by the model. |