Non-monotonic dependence of current upon i-width in silicon p–i–n diodes |
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引用本文: | 庞正鹏,王欣,陈健,杨盼,张洋,田永辉,杨建红.Non-monotonic dependence of current upon i-width in silicon p–i–n diodes[J].中国物理 B,2018(6). |
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作者姓名: | 庞正鹏 王欣 陈健 杨盼 张洋 田永辉 杨建红 |
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摘 要: | Silicon p–i–n diodes with different i-region widths are fabricated and tested. It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V. In this paper, an analytical model is presented to explain the non-monotonic behavior, which mainly takes into account the diffusion current and recombination current contributing to the total current. The calculation results indicate that the concentration ratio of p-region to n-region plays a crucial role in the non-monotonic behavior, and the carrier lifetime also has a great influence on this abnormal phenomenon.
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