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Flat-band voltage shift in metal-gate/high-k/Si stacks |
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| Authors: | Huang An-Ping Zheng Xiao-Hu Xiao Zhi-Song Yang Zhi-Chao Wang Mei Paul K Chu and Yang Xiao-Dong |
| Institution: | Department of Physics, Beihang University, Beijing 100191, China;Department of Physics, Beihang University, Beijing 100191, China;Department of Physics, Beihang University, Beijing 100191, China;Department of Physics, Beihang University, Beijing 100191, China;Department of Physics, Beihang University, Beijing 100191, China;Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China;Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA |
| Abstract: | In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (Vfb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (Vfb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described. |
| Keywords: | flat-band voltage shift Vfb roll-off metal gate high-k dielectrics |
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