The effects of fast neutron irradiation on oxygen in Czochralski silicon |
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Authors: | Chen Gui-Feng Yan Wen-Bo Chen Hong-Jian Li Xing-Hua and Li Yang-Xian |
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Institution: | School of Material Science and Engineering, Hebei
University of Technology, Tianjin 300130, China |
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Abstract: | The effects of fast neutron irradiation on oxygen atoms in
Czochralski silicon (CZ-Si) are investigated systemically by using
Fourier transform infrared (FTIR) spectrometer and positron
annihilation technique (PAT). Through isochronal annealing, it is
found that the trend of variation in interstitial oxygen
concentration (Oi]) in fast neutrons irradiated CZ-Si
fluctuates largely with temperature increasing, especially between
500 and 700\du. After the CZ-Si is annealed at 600\du, the
V4 appearing as three-dimensional vacancy clusters causes the
formation of the molecule-like oxygen clusters, and more importantly
these dimers with small binding energies (0.1--1.0eV) can diffuse
into the Si lattices more easily than single oxygen atoms, thereby
leading to the strong oxygen agglomerations. When the CZ-Si is
annealed at temperature increasing up to 700\du, three-dimensional
vacancy clusters disappear and the oxygen agglomerations decompose
into single oxygen atoms (O) at interstitial sites. Results from
FTIR spectrometer and PAT provide an insight into the nature of the
Oi] at temperatures between 500 and 700\du. It turns out
that the large fluctuation of Oi] after short-time
annealing from 500 to 700\du\ results from the transformation of
fast neutron irradiation defects. |
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Keywords: | neutron irradiation irradiation defects FTIR spectrometer positron lifetime |
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