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Non-recessed-gate quasi-E-mode double heterojunction AIGaN/GaN high electron mobility transistor with high breakdown voltage |
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| Authors: | Mi Min-Han Zhang Kai Chen Xing Zhao Sheng-Lei Wang Chong Zhang Jin-Cheng Ma Xiao-Hua Hao Yue |
| Institution: | Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi" an 710071, China |
| Abstract: | GaN-based HEMTs, enhancement-mode, high breakdown voltage |
| Keywords: | GaN-based HEMTs enhancement-mode high breakdown voltage |
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