Effects of V/III ratio on the growth of a-plane GaN films |
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| Authors: | Xie Zi-Li Li Yi Liu Bin Zhang Rong Xiu Xiang-Qian Chen Peng and Zheng You-Liao |
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| Institution: | Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China |
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| Abstract: | The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal-organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN. |
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| Keywords: | V/III ratio a-plane GaN non-polar metal-organic chemical vapour deposition |
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