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Structural,electronic and vibrational properties of indium oxide clusters
作者姓名:徐茂杰  倪一  李振庆  王胜利  柳效辉  窦晓鸣
作者单位:Department of Physics, Shanghai Jiao Tong University School of Optical-electrical and Computer Engineering, University of Shanghai for Science and Technology Consolidated Research Institute for Advanced Science and Medical Care, Waseda University
摘    要:Geometric, electronic and vibrational properties of the most stable and energetically favourable configurations of indium oxide clusters InmOn (1 ≤ m, n ≤ 4) are investigated using density functional theory. The lowest energy geometries prefer the planar arrangement of the constituent atoms with a trend to maximize the number of ionic In-O bonds. Due to the charge transfer from In to O atoms, the electrostatic repulsion occurs between the atoms with the same kind of charge. The minimization of electrostatic repulsion and the maximization of In-O bond number compete between each other and determine the location of the isometric total energy. The most stable linear In-O-In-O structure of In2O2 cluster is attributed to the reduced electrostatic repulsive energy at the expense of In-O bond number, while the lowest energy rhombus-like structure of In2O3 cluster reflects the maximized number of In-O bonds. Furthermore, the vibrational frequencies of the lowest energy clusters are calculated and compared with the available experimental results. The energy gap and the charge density distribution for clusters with varying oxygen/indium ratio are also discussed.

关 键 词:indium  oxide  cluster  equilibrium  structure  vibrational  frequency
收稿时间:8/9/2010 12:00:00 AM
修稿时间:1/6/2011 12:00:00 AM

Structural, electronic and vibrational properties of indium oxide clusters
Xu Mao-Jie,Niquad Yi,Li Zhen-Qing,Wang Sheng-Li,Liu Xiao-Hui and Dou Xiao-Ming.Structural,electronic and vibrational properties of indium oxide clusters[J].Chinese Physics B,2011,20(6):63101-063101.
Authors:Xu Mao-Jie  Niquad Yi  Li Zhen-Qing  Wang Sheng-Li  Liu Xiao-Hui and Dou Xiao-Ming
Institution:Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;School of Optical-electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;School of Optical-electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;Consolidated Research Institute for Advanced Scie
Abstract:Geometric, electronic and vibrational properties of the most stable and energetically favourable configurations of indium oxide clusters InmOn (1≤m, n4) are investigated using density functional theory. The lowest energy geometries prefer the planar arrangement of the constituent atoms with a trend to maximize the number of ionic In-O bonds. Due to the charge transfer from In to O atoms, the electrostatic repulsion occurs between the atoms with the same kind of charge. The minimization of electrostatic repulsion and the maximization of In-O bond number compete between each other and determine the location of the isometric total energy. The most stable linear In-O-In-O structure of In2O2 cluster is attributed to the reduced electrostatic repulsive energy at the expense of In-O bond number, while the lowest energy rhombus-like structure of In2O3 cluster reflects the maximized number of In-O bonds. Furthermore, the vibrational frequencies of the lowest energy clusters are calculated and compared with the available experimental results. The energy gap and the charge density distribution for clusters with varying oxygen/indium ratio are also discussed.
Keywords:indium oxide cluster  equilibrium structure  vibrational frequency
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