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First-principles study of structural,electronic, and magnetic properties of Mn4XGe3 (X = Fe,Co,Ni)
引用本文:赵永红,刘邦贵.First-principles study of structural,electronic, and magnetic properties of Mn4XGe3 (X = Fe,Co,Ni)[J].中国物理 B,2008,17(9):3417-3421.
作者姓名:赵永红  刘邦贵
作者单位:Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Beijing 100190, China;Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Beijing 100190, China
基金项目:Project supported by the National Natural Science Foundation of China (Grant Nos 10774180, 90406010 and 60621091) and Chinese Department of Science and Technology under National Basic Research Program (973) (Grant No 2005CB623602).
摘    要:In order to search for promising candidates for spintronic applications, this paper systematically studies three ternary compounds based on Mn5Ce3 by using a full-potential linearized augmented plane wave method within the density functional theory. Through structure optimization and electronic structure calculations, it finds that Mn4FeCe3 and MnaCoCe3 have much higher spin-polarization than original intermetallic compound Mn5Ce3, although the spin polarization of MnaNiCe3 is lower than that of Mn5Ce3. The calculated result is in agreement with experiment in the case of Mn4FeCe3. Both of them can be taken as promising candidates for spintronics applications because of their high spin-polarization and compatibility with semiconductors.

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收稿时间:1/7/2008 12:00:00 AM

First-principles study of structural, electronic, andmagnetic properties of Mn4XGe3 (X =Fe,Co,Ni)
Zhao Yong-Hong and Liu Bang-Gui.First-principles study of structural, electronic, andmagnetic properties of Mn4XGe3 (X =Fe,Co,Ni)[J].Chinese Physics B,2008,17(9):3417-3421.
Authors:Zhao Yong-Hong and Liu Bang-Gui
Institution:Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Beijing 100190, China
Abstract:In order to search for promising candidates for spintronic applications, this paper systematically studies three ternary compounds based on Mn5Ge3 by using a full-potential linearized augmented plane wave method within the density functional theory. Through structure optimization and electronic structure calculations, it finds that Mn4FeGe3 and Mn4CoGe3 have much higher spin-polarization than original intermetallic compound Mn5Ge3, although the spin polarization of Mn4NiGe3 is lower than that of Mnspin-polarization, spin-injection, diluted magnetic semiconductorsProject supported by the National Natural Science Foundation of China (Grant Nos 10774180, 90406010 and 60621091) and Chinese Department of Science and Technology under National Basic Research Program (973) (Grant No 2005CB623602).6185, 7115A, 7120C, 0155In order to search for promising candidates for spintronic applications, this paper systematically studies three ternary compounds based on Mn5Ge3 by using a full-potential linearized augmented plane wave method within the density functional theory. Through structure optimization and electronic structure calculations, it finds that Mn4FeGe3 and Mn4CoGe3 have much higher spin-polarization than original intermetallic compound Mn5Ge3, although the spin polarization of Mn4NiGe3 is lower than that of Mnspin-polarization, spin-injection, diluted magnetic semiconductorsProject supported by the National Natural Science Foundation of China (Grant Nos 10774180, 90406010 and 60621091) and Chinese Department of Science and Technology under National Basic Research Program (973) (Grant No 2005CB623602).6185, 7115A, 7120C, 0155In order to search for promising candidates for spintronic applications, this paper systematically studies three ternary compounds based on Mn5Ge3 by using a full-potential linearized augmented plane wave method within the density functional theory. Through structure optimization and electronic structure calculations, it finds that Mn4FeGe3 and Mn4CoGe3 have much higher spin-polarization than original intermetallic compound Mn5Ge3, although the spin polarization of Mn4NiGe3 is lower than that of Mnspin-polarization, spin-injection, diluted magnetic semiconductorsProject supported by the National Natural Science Foundation of China (Grant Nos 10774180, 90406010 and 60621091) and Chinese Department of Science and Technology under National Basic Research Program (973) (Grant No 2005CB623602).6185, 7115A, 7120C, 0155In order to search for promising candidates for spintronic applications, this paper systematically studies three ternary compounds based on Mn5Ge3 by using a full-potential linearized augmented plane wave method within the density functional theory. Through structure optimization and electronic structure calculations, it finds that Mn4FeGe3 and Mn4CoGe3 have much higher spin-polarization than original intermetallic compound Mn5Ge3, although the spin polarization of Mn4NiGe3 is lower than that of Mnspin-polarization, spin-injection, diluted magnetic semiconductorsProject supported by the National Natural Science Foundation of China (Grant Nos 10774180, 90406010 and 60621091) and Chinese Department of Science and Technology under National Basic Research Program (973) (Grant No 2005CB623602).6185, 7115A, 7120C, 0155In order to search for promising candidates for spintronic applications, this paper systematically studies three ternary compounds based on Mn5Ge3 by using a full-potential linearized augmented plane wave method within the density functional theory. Through structure optimization and electronic structure calculations, it finds that Mn4FeGe3 and Mn4CoGe3 have much higher spin-polarization than original intermetallic compound Mn5Ge3, although the spin polarization of Mn4NiGe3 is lower than that of Mn$_{5}$Ge3. The calculated result is in agreement with experiment in the case of Mn4FeGe3. Both of them can be taken as promising candidates for spintronics applications because of their high spin-polarization and compatibility with semiconductors.
Keywords:spin-polarization  spin-injection  diluted magnetic semiconductors
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