Dielectronic recombination of Co-like tantalum |
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Authors: | Zhou Li Meng Fan-Chang Huang Min Chen Chong-Yang and Wang Yan-Sen |
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Institution: | The Key Laboratory of Applied Ion Beam Physics,
the
Ministry of Education, Shanghai 200433, China;Shanghai EBIT Laboratory, Modern Physics Institute, Fudan
University, Shanghai 200433, China |
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Abstract: | {Ab initio }calculation of the total dielectronic
recombination (DR) rate coefficient from the ground state of Co-like
tantalum is performed using the relativistic distorted-wave
approximation with configuration interaction. The contributions to
the total DR rate coefficients are explicitly calculated from the
complexes of Ni-like tantalum: $3s^23p^63d_{3 / 2}^3 3d_{5 / 2}^6
{n}'{l}'$, $3s^23p^53d^{10}{n}'{l}'$, $3s3p^63d^{10}{n}'{l}'$,
$3s^23p^63d^84l{n}'{l}'$, $3s^23p^53d^94l{n}'{l}'$ and
$3s3p^63d^94l{n}'{l}'$ with ${n}' \le 25$, and
$3s^23p^63d^85l{n}'{l}'$ with ${n}' \le 9$. The ${l}'$ and ${n}'$
dependences of partial DR rate coefficients are investigated. The
contributions from higher ${n}'$complexes are evaluated by a
level-by-level extrapolation method. The total DR rate coefficients
mainly come from the complex series $3s^23p^63d^84l{n}'{l}'$,
$3s^23p^53d^94l{n}'{l}'$ and are fitted to an empirical formula with
high accuracy. Comparison of the present results with those of other
works shows that the previously published data underestimate
significantly the DR rates of Co-like tantalum. |
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Keywords: | dielectronic recombination rate
coefficient Co-like tantalum |
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