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High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy
引用本文:邢军亮,张宇,徐应强,王国伟,王娟,向伟,倪海桥,任正伟,贺振宏,牛智川.High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J].中国物理 B,2014,23(1):17805-017805.
作者姓名:邢军亮  张宇  徐应强  王国伟  王娟  向伟  倪海桥  任正伟  贺振宏  牛智川
作者单位:State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences
基金项目:Project supported by the National Basic Research Program of China(Grant Nos.2013CB932904,2012CB932701,2011CB922201,and 2010CB327600);the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005);the National Natural Science Foundation of China(Grant Nos.61274013,U1037602,and 61290303)
摘    要:The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well(QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well(MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence(PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In0.485GaAs0.184Sb/Al0.3Ga0.45In0.25As0.22Sb0.78MQW with 1.72% compressive strain grown at 460 C posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.

关 键 词:GaSb  multiple-quantum  well  photoluminescence
收稿时间:2013-04-25

High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy
Xing Jun-Liang,Zhang Yu,Xu Ying-Qiang,Wang Guo-Wei,Wang Juan,Xiang Wei,Ni Hai-Qiao,Ren Zheng-Wei,He Zhen-Hong,Niu Zhi-Chuan.High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J].Chinese Physics B,2014,23(1):17805-017805.
Authors:Xing Jun-Liang  Zhang Yu  Xu Ying-Qiang  Wang Guo-Wei  Wang Juan  Xiang Wei  Ni Hai-Qiao  Ren Zheng-Wei  He Zhen-Hong  Niu Zhi-Chuan
Institution:State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:
Keywords:GaSb  multiple-quantum well  photoluminescence
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