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大气压等离子体辅助多晶硅薄膜化学气相沉积参数诊断
引用本文:刘莉莹,张家良,郭卿超,王德真.大气压等离子体辅助多晶硅薄膜化学气相沉积参数诊断[J].中国物理 B,2010,19(4):2653-2660.
作者姓名:刘莉莹  张家良  郭卿超  王德真
作者单位:大连理工大学物理与光电工程学院,大连 116023;大连理工大学物理与光电工程学院,大连 116023;大连理工大学物理与光电工程学院,大连 116023;大连理工大学物理与光电工程学院,大连 116023
基金项目:国家自然科学基金(批准号:10775026,10675028)资助的课题.
摘    要:本文采用发射光谱法诊断了大气压下Ar气、SiCl4及H2气混合气体(Ar/SiCl4/H2)射频放电等离子体射流特性.利用Si原子谱线强度计算了电子激发温度并以此估算了Si原子数密度,研究了射频功率及气体流量对电子激发温度和Si原子数密度以及SiCl4解离率的作用.

关 键 词:大气压等离子体射流,  发射光谱,  电子激发温度,  多晶硅薄膜沉积

Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film
Liu Li-Ying,Zhang Jia-Liang,Guo Qing-Chao and Wang De-Zhen.Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film[J].Chinese Physics B,2010,19(4):2653-2660.
Authors:Liu Li-Ying  Zhang Jia-Liang  Guo Qing-Chao and Wang De-Zhen
Abstract:The characteristics of the radio frequency plasma jets at atmospheric pressure in Ar/SiCl4/H2 gas mixture were studied in this paper by using optical emission spectroscopy. Firstly, the electron excitation temperature of plasmas was calculated from the Si atom spectral emission using Boltzmann plots, and then, based on the temperature, the number density of the Si atoms in the plasmas and the dissociation ratio of the SiCl4 were estimated. Finally, the dependence of the excitation temperature, the number density of the Si atoms and the dissociation ratio of the SiCl4 on the discharge power and the gas flow rate were presented.
Keywords:atmospheric pressure plasma jet  plasma emission spectra  electron excitation temperature  polycrystalline silicon thin film
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