Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition |
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Authors: | Liang Song Zhu Hong-Liang Pan Jiao-Qing Zhao Ling-Juan Wang Lu-Feng Zhou Fan Shu Hui-Yun Bian Jing An Xin and Wang Wei |
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Institution: | Key Laboratory of Semiconductor Materials Science,
Institute of Semiconductors,
Chinese Academy of Sciences, Beijing
100083,
China |
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Abstract: | Photoluminescence (PL) and lasing properties of InAs/GaAs quantum
dots (QDs) with different growth procedures prepared by metalorganic
chemical vapour deposition are studied. PL measurements show that
the low growth rate QD sample has a larger PL intensity and a
narrower PL line width than the high growth rate sample. During
rapid thermal annealing, however, the low growth rate sample shows a
greater blueshift of PL peak wavelength. This is caused by the
larger InAs layer thickness which results from the larger 2--3 dimensional
transition critical layer thickness for
the QDs in the low-growth-rate sample. A growth technique including
growth interruption and in-situ annealing, named {indium flush
method,} is used during the growth of GaAs cap layer, which can
flatten the GaAs surface effectively. Though the method results in a
blueshift of PL peak wavelength and a broadening of PL line width,
it is essential for the fabrication of room temperature working QD
lasers. |
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Keywords: | metal-organic chemical vapour
deposition InAs/GaAs quantum dots laser |
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