Structure, ferroelectric and dielectric properties of Bi2WO6 with different bismuth content |
| |
| Authors: | Wang Xiao-Juan Gong Zhi-Qiang Zhu Jun and Chen Xiao-Bing |
| |
| Institution: | College of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu 215500, China;College of Physics Science and Technology, Yangzhou
University, Yangzhou 225002, China; College of Physics Science and Technology, Yangzhou
University, Yangzhou 225002, China; College of Physics Science and Technology, Yangzhou
University, Yangzhou 225002, China;Laboratory for Climate Studies, National Climate Center,
China Meteorological Administration, Beijing 100081, China |
| |
| Abstract: | This paper reports that the Bi2WO6 ferroelectric ceramics
with excess Bi2O3 of 0.0, 2.0, 3.5 and 5.0wt.% of the
stoichiometric composition are prepared by the conventional
solid-state reaction method. Their microstructure, ferroelectric
properties, the concentration and mobility of the defects have been
analysed systematically. With increasing Bi content, the remnant
polarization decreases, and the broken-down voltage increases. The
optimum Bi excess, 3.5, lowers the oxygen vacancy concentration,
while further Bi-addition brings about more defects. The activation
energies fitted from cole-cole plots are 0.97eV, 1.07eV,
1.18eV, and 1.33eV, respectively. This suggests that the
mobility of the defects is weakened by Bi-addition, which may be due
to the increase of the ratio of the number of Bi2O2 layers
to that of the perovskite blocks. |
| |
| Keywords: | ferroelectric ceramics Bi2WO6 oxygen vacancy x-ray photoemission spectroscopy |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
