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An oxide filled extended trench gate super junction MOSFET structure
Authors:Wang Cai-Lin and Sun Jun
Institution:Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, Chin;Technologies Corporation, CSMC, Wuxi 214061, China; Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, China
Abstract:This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.
Keywords:power MOSFET  super junction  trench gate  shallow angle implantation
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