An oxide filled extended trench gate super junction MOSFET structure |
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Authors: | Wang Cai-Lin and Sun Jun |
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Institution: | Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, Chin;Technologies Corporation, CSMC, Wuxi 214061, China; Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, China |
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Abstract: | This paper proposes an oxide filled extended trench gate super
junction (SJ) MOSFET structure to meet the need of higher frequency
power switches application. Compared with the conventional trench
gate SJ MOSFET, new structure has the smaller input and output
capacitances, and the remarkable improvements in the breakdown
voltage, on-resistance and switching speed. Furthermore, the SJ in the
new structure can be realized by the existing trench etching and
shallow angle implantation, which offers more freedom to SJ MOSFET
device design and fabrication. |
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Keywords: | power MOSFET super junction trench gate shallow angle implantation |
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