|
|||||
|
|
Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs |
|
| Authors: | Jiang Xiang-Wei Li Shu-Shen |
| Institution: | State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China |
| Abstract: | |
| Keywords: | quantum confinement tunneling metal-oxide-semiconductor field-effect transistors linear combination of bulk band |
| 本文献已被 维普 等数据库收录！ | |