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Effect of Si doping in wells of A1GaN/GaN superlattice on the characteristics of epitaxial layer |
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| Authors: | Zhang Wei Xue Jun-Shuai Zhou Xiao-Wei Zhang Yue Liu Zi-Yang Zhang Jin-Cheng and HaoYue |
| Institution: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi＇an 710071, China |
| Abstract: | A1GaN/GaN, superlattice, Si doping |
| Keywords: | A1GaN/GaN superlattice Si doping |
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