| Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition |
| |
| 作者姓名： | 王岩 罗帅 季海铭 曲迪 黄翊东 |
| |
| 作者单位： | Innovation Center of Advanced Optoelectronic Chip;Tianjin H-Chip Technology Group Corporation;Department of Electronic Engineering;Key Laboratory of Semiconductor Materials Science;Center of Materials Science and Optoelectronics Engineering |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China(Grant No.61974141);Tianjin Municipal Science and Technology Bureau;Science and Technology Innovation Bureau of China-Singapore Tianjin Eco-City。 |
| |
| 摘 要： | We demonstrate high-performance broadband tunable external-cavity lasers(ECLs) with the metal-organic chemical vapor deposition(MOCVD) grown In As/In P quantum dots(QDs) structures. Without cavity facet coatings, the 3-d B spectral bandwidth of the Fabry–Perot(FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm.Combined with the anti-reflection(AR)/high-reflection(HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 k A/cm2. The maximum output power of 6.5 m W was achieved under a 500 m A injection current.All achievements mentioned above were obtained under continuous-wave(CW) mode at room temperature(RT).
|
| 关 键 词： | InAs/InP quantum dot external-cavity laser continuous-wave operation metal-organic chemical vapor deposition |
Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition |
| |
| Yan Wang,Shuai Luo,Haiming Ji,Di Qu,Yidong Huang.Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition[J].Chinese Physics B,2021(1). |
| |
| Authors: | Yan Wang Shuai Luo Haiming Ji Di Qu Yidong Huang |
| |
| Institution: | (Innovation Center of Advanced Optoelectronic Chip,Institute for Electronics and Information Technology in Tianjin,Tsinghua University,Tianjin 300467,China;Tianjin H-Chip Technology Group Corporation,Tianjin 300467,China;Department of Electronic Engineering,Tsinghua University,Beijing 100084,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China) |
| |
| Abstract: | |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
