| High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga_2O_3 thin film |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 61774019 and 51572033), the Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT), and the Fundamental Research Funds for the Central Universities, China. |
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| 摘 要： | Si-doped β-Ga_2O_3 films are fabricated through metal-organic chemical vapor deposition(MOCVD). Solar-blind ultraviolet(UV) photodetector(PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 m A under 200 μW·cm-2254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W~(-1). The Si-doped β-Ga_2O_3-based PD is promised to perform solar-blind photodetection with high performance.
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| 收稿时间： | 2020-12-09 |
High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film |
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| Abstract: | Si-doped β-Ga2O3 films are fabricated through metal-organic chemical vapor deposition (MOCVD). Solar-blind ultraviolet (UV) photodetector (PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 mA under 200 μW·cm-2 254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W-1. The Si-doped β-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance. |
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| Keywords: | Si-doped β-Ga2O3 metal-organic chemical vapor deposition (MOCVD) solar-blind high responsivity |
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