Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure |
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作者单位: | 1.College of Science, Shaoyang University, Hunan 422004, China;2.College of Science, Guilin University of Technology, Guilin 541004, China |
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基金项目: | Project supported by the National Natural Science Foundation of China (Grant No. 11864009). |
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摘 要: | We theoretically investigate the wave-vector filtering(WVF) effect for electrons in an antiparallel asymmetric doubleδ-magnetic-barrier microstructure under a bias, which can be fabricated experimentally by patterning two asymmetric ferromagnetic(FM) stripes on the top and the bottom of GaAs/Al_xGa_(1-x) As heterostructure, respectively. It is found that an appreciable WVF effect appears because of an essentially two-dimensional(2D) process for electrons across this microstructure. WVF effect is found to be sensitive to the applied bias. WVF efficiency can be tuned by changing bias,which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.
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收稿时间: | 2021-02-23 |
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