| A MOVPE method for improving InGaN growth quality by pre-introducing TMIn |
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| 作者姓名： | 曹子坤 赵德刚 杨静 朱建军 梁锋 刘宗顺 |
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| 作者单位： | State Key Laboratory of Integrated Optoelectronics;College of Materials Science and Opto-Electronic Technology;Center of Materials Science and Optoelectronics Engineering |
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| 基金项目： | Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400803 and 2016YFB0401801);the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,and 61574134)。 |
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| 摘 要： | We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality.
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| 关 键 词： | INGAN metal organic vapor phase epitaxy(MOVPE) |
A MOVPE method for improving InGaN growth quality by pre-introducing TMIn |
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| Zi-Kun Cao,De-Gang Zhao,Jing Yang,Jian-Jun Zhu,Feng Liang,Zong-Shun Liu.A MOVPE method for improving InGaN growth quality by pre-introducing TMIn[J].Chinese Physics B,2021(1). |
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| Authors: | Zi-Kun Cao De-Gang Zhao Jing Yang Jian-Jun Zhu Feng Liang Zong-Shun Liu |
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| Institution: | (State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China) |
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| Abstract: | We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality. |
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