Theoretical study of electromechanical property in a p-type silicon nanoplate for mechanical sensors |
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Authors: | Zhang Jia-Hong Huang Qing-An Yu Hong and Lei Shuang-Ying |
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Institution: | Key Laboratory of MEMS of Ministry of Education, Southeast
University, Nanjing 210096, China |
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Abstract: | Electromechanical property of a p-type single-crystal silicon
nanoplate is modelled by a microscopic approach where the hole
quantization effect and the spin--orbit coupling effect are taken
into account. The visible anisotropic subband structures are
calculated by solving self-consistently the stress-dependent
6$\times $6 ${\bm k} \cdot {\bm p} $ Schr\"{o}dinger equation with
the Poisson equation. The strong mixing among heavy, light, and
split-off holes is quantitatively assessed. The influences of the
thickness and the temperature on the piezoresistive coefficient are
quantitatively investigated by using the hole concentrations and the
effective masses from the complex dispersion structure of the
valence band with and without stresses. Our results show that the
stress determines the extent to which the band is mixed. The hole
quantization effect increases as the thickness decreases, and
therefore the valence band is strongly reshaped, resulting in the
size-dependent piezoresistivity of the silicon nanoplate. The
piezoresistive coefficient increases almost 4 times as the thickness
reduces from the bulk to 3\,nm, exhibiting a promising application
in mechanical sensors. |
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Keywords: | silicon nanoplate piezoresistive band structure band mixing |
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