Characterization of ion-implanted 4H-SiC Schottky barrier diodes |
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Authors: | Wang Shou-Guo Zhang Yan Zhang Yi-Men Zhang Yu-Ming |
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Institution: | Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; School of Microelectronics, Xidian University, Xi'an 710071, China;School of Information Science and Technology, Northwest University, Xi'an 710127, China |
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Abstract: | Ion-implantation layers are fabricated by multiple
nitrogen ion-implantations (3 times for sample A and 4 times for
sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth
profiles are calculated by using the Monte Carlo simulator TRIM. The
fabrication process and the I--V and C--V characteristics
of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated
on these multiple box-like ion-implantation layers are presented in
detail. Measurements of the reverse I--V characteristics
demonstrate a low reverse current, which is good enough for many
SiC-based devices such as SiC metal--semiconductor field-effect
transistors (MESFETs), and SiC static induction transistors (SITs).
The parameters of the diodes are extracted from the forward I--V
and C--V characteristics. The values of ideality factor n of
SBDs for samples A and B are 3.0 and 3.5 respectively, and the
values of series resistance R_\rm s are 11.9 and 1.0~kΩ
respectively. The values of barrier height φ _\rm B of
Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I--V method and 1.14
and 0.93 eV obtained by the C--V method for samples A and B
respectively. The activation rates for the implanted nitrogen ions
of samples A and B are 2\% and 4\% respectively extracted from
C--V testing results. |
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Keywords: | silicon carbide ion-implantation Schottky barrier diodes barrier height |
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