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Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs |
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| Authors: | Li Da-Bing Hu Wei-Guo Miyake Hideto Hiramatsu Kazumasa and Song Hang |
| Institution: | Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China |
| Abstract: | Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results. |
| Keywords: | nitride quantum wells optical properties luminescence |
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