| HgCdTe器件中载流子扩散长度的硼离子注入效应研究 |
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| 引用本文： | 陈贵宾,全知觉,王少伟,陆卫.HgCdTe器件中载流子扩散长度的硼离子注入效应研究[J].光子学报,2007,36(4):595-598. |
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| 作者姓名： | 陈贵宾 全知觉 王少伟 陆卫 |
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| 作者单位： | 1. 淮阴师范学院,物理系和低维材料化学省重点建设实验室,江苏淮安,223001;中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083
2. 中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083 |
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| 基金项目： | 国家自然科学基金
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江苏省高校自然科学基金 |
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| 摘 要： | 报道了非直接接触、高分辨率的激光束诱导电流谱表征技术在检测半导体材料、器件工艺中的应用.研究结果表明:p型HgCdTe薄膜经硼离子注入后形成的n型区面积大于实际的离子注入区域；对不同注入剂量系列单元不同区域载流子扩散长度进行了提取,表明n区载流子扩散长度随硼离子注入剂量增加而减小.
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| 关 键 词： | 离子注入 p-n结 激光束诱导电流谱（LBIC） 扩散长度 |
| 文章编号： | 1004-4213（2007）04-0595-4 |
| 收稿时间： | 2005-12-02 |
| 修稿时间： | 2005-12-02 |
Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction |
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| CHEN Gui-bin,QUAN Zhi-jue,WANG Shao-wei,LU Wei.Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction[J].Acta Photonica Sinica,2007,36(4):595-598. |
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| Authors: | CHEN Gui-bin QUAN Zhi-jue WANG Shao-wei LU Wei |
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| Institution: | 1.Jiangsu key Laboratory for Chemistry of Low Dimensional Material and Physics Department,Huaiyin Teachers college,Huaian 223001,China;2.National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China |
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| Abstract: | The line scan and mapping profiles of a series of HgCdTe n-on-p junctions with different boron implantation dose have been measured by laser beam induced current.The n-type region is larger than the actually boron-implanted area.The minority carrier diffusion length both inside and outside at p-n junction boundary can be extracted from the LBIC line scan profile.The response enhancement for the small optically sensitive area devices is due to enlarging the n-type area and carriers collecting effect on the external side. |
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| Keywords: | Ion implantation p-n junction Diffusion length Laser Beam Induced Current (LBIC) |
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