| 非晶态硒化镉薄膜瞬态光电特性 |
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| 引用本文： | 叶天水,郭享群,曾锦川.非晶态硒化镉薄膜瞬态光电特性[J].光子学报,1991,20(1):104-107. |
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| 作者姓名： | 叶天水 郭享群 曾锦川 |
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| 作者单位： | 华侨大学应用物理系
(叶天水，郭享群)，华侨大学应用物理系(曾锦川) |
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| 摘 要： | 本文报道用真空热蒸发法淀积的非晶态硒化镉薄膜作光敏介质制备超快光电导探测器。用对撞脉冲锁模Nd:YAG激光器产生的超短光脉冲序列对探测器的响应时间进行检测,结果表明a-CdSe薄膜对皮秒(10-12秒)级的超短光脉冲作用具有良好的瞬态响应光电特性,探讨a-CdSe薄膜快速弛豫过程的内在机理。
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| 关 键 词： | 非晶态半导体 薄膜 光电特性 |
THE INSTANTEOUS PHOTO ELECTRIC CHARACTER OF AMORPHOUS CdSe FILM |
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| Ye Tianshui,Guo Hengqun,Zeng Jinchuan.THE INSTANTEOUS PHOTO ELECTRIC CHARACTER OF AMORPHOUS CdSe FILM[J].Acta Photonica Sinica,1991,20(1):104-107. |
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| Authors: | Ye Tianshui Guo Hengqun Zeng Jinchuan |
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| Institution: | Ye Tianshui,Guo Hengqun,Zeng JinchuanDepartment of Applied Physics,Huaqiao University |
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| Abstract: | The authors reported an amorphous CdSe film deposited by vacuum thermal voporization used as an photosensitive dielectric film to make the ultrahigh speed photocon -nductive detectors. It is shown that this kind of film a-CdSe has an excellent photoelectric characteristics of instaneous response to picosecond laser pulse by testing the responsive time of those detectors using ultrashort light train pulses emitting from a colliding pulse mode -locking Nd:YAG laser. And it is also deal with the inner mechanism of ultrahigh speed relaxation process in the a-CdSe film. |
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| Keywords: | Non-crystalline semiconductor Film Photoelectric characteristics |
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