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| 60Coγ和高能电子在硅中NIEL的Monte Carlo计算 | |
| 引用本文： | 陈世彬,陈雨生,黄流兴,张义门.60Coγ和高能电子在硅中NIEL的Monte Carlo计算[J].光子学报,2000,29(5):415-419. |
| 作者姓名： | 陈世彬 陈雨生 黄流兴 张义门 |
| 作者单位： | 1. 西北核技术研究所五室,西安,710024;西安电子科技大学微电子所,西安,710071 2. 西北核技术研究所五室,西安,710024 3. 西安电子科技大学微电子所,西安,710071 |
| 摘 要： | 本文提出了计算高能电子和γ非电离能量损失(NIEL)的Monte Carlo方法,首次利用Monte Carlo方法计算了高能电子和60Coγ的NIEL.给出了电子和60Coγ在半导体硅材料中产生的NIEL和缺陷分布.计算结果与文献的比较表明模型是合理的. |
| 关 键 词： | 辐射损伤 能量沉积 Monte Carlo |
| 收稿时间： | 1999-11-10 |
| 修稿时间： | 1999-11-10 |
A MONTE CARLO CALCULATION OF NIEL IRRADIATION-INDUCED IN SILICON BY 60Co GAMMAS AND ENERGETIC ELECTRONS |
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| Chen Shibin,Chen Yusheng,Huang Liuxing,Zhang Yimen.A MONTE CARLO CALCULATION OF NIEL IRRADIATION-INDUCED IN SILICON BY 60Co GAMMAS AND ENERGETIC ELECTRONS[J].Acta Photonica Sinica,2000,29(5):415-419. | |
| Authors: | Chen Shibin Chen Yusheng Huang Liuxing Zhang Yimen |
| Institution: | 1. Northwest Institute of Nuclear Technology P. O. Box 69 15, Xi’an 710024;2. Microelectronics Institute, Xidian University, Xi’an 710071 |
| Abstract: | A Monte Carlo method of calculating non-ionizing energy loss (NIEL) induced by electrons and gammas in materials was presented.Based on this method,a computer program nemed NIELEG was written which can be used in any materials of layered structure to calculate damage of coupled electrons and gamma.In this paper,the damages irradiation-induced by below 10MeV electrons and 60Coγ in silicon were calculated with the program.These results lead us to conclude that the method is available. |
| Keywords: | Radiation damage Energy deposition Monte Carlo |
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