| 带有锥形增益区14xxnm 量子阱激光器的研制 |
| |
| 引用本文： | 张洪波,韦欣,朱晓鹏,王国宏,张敬明,马骁宇.带有锥形增益区14xxnm 量子阱激光器的研制[J].光子学报,2005,34(4):496-498. |
| |
| 作者姓名： | 张洪波 韦欣 朱晓鹏 王国宏 张敬明 马骁宇 |
| |
| 作者单位： | 中国科学院半导体研究所光电子器件国家工程中心,北京,100083 |
| |
| 基金项目： | 国家 863计划(2001AA312270)资助项目 |
| |
| 摘 要： | 利用MOCVD生长了14xxnm AlGaInAs/AlInAs/InP应变量子阱外延片.采用带有锥形增益区脊型波导结构和普通条形脊型波导结构在相同的实验条件下制作800 μm腔长激光器管芯，在相同的驱动电流下前者可以获得更高的输出光功率，而且P-Ⅰ曲线线性度较好、饱和电流高. 1200 μm腔长带有锥形增益区脊型波导结构管芯功率达到500 mW，饱和电流3 A以上，峰值波长1460 nm，远场发散角为39°×11°.
|
| 关 键 词： | 14xxnm抽运源 锥形增益区 量子阱激光器 |
| 收稿时间： | 2004-02-27 |
| 修稿时间： | 2004年2月27日 |
14xxnm Quantum Well Lasers with Tapered Gain Region |
| |
| Zhang Hongbo,Wei Xin,Zhu Xiaopeng,Wang Guohong,Zhang Jingming,Ma Xiaoyu.14xxnm Quantum Well Lasers with Tapered Gain Region[J].Acta Photonica Sinica,2005,34(4):496-498. |
| |
| Authors: | Zhang Hongbo Wei Xin Zhu Xiaopeng Wang Guohong Zhang Jingming Ma Xiaoyu |
| |
| Institution: | (National Engineering Research Center for Optoelectronics Devices,Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083) |
| |
| Abstract: | The 14xxnm AlGaInAs/AlInAs/InP Strained Quantum Well Lasers with Tapered Gain Regions and with Ridge Waveguide is fabricated under the same experimental condition. The laser structure is grown by MOCVD. The output power and the saturation current of the former structure is higher than the latter under the same driving current when the cavity length is 800 μm. When the cavity length is 1200 μm the output power above 500 mW and the saturation current above 3 A have been achieved for the former structure. The measured vertical and parallel divergence angle are 39° and 11°, respectively. |
| |
| Keywords: | 14xxnm pump laser Tapered gain region Strained quantum well lasers |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《光子学报》浏览原始摘要信息 |
| 点击此处可从《光子学报》下载免费的PDF全文 |
