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原子氢辅助分子束外延GaAs(331)A表面形貌演化
引用本文:牛智红,任正伟,贺振宏.原子氢辅助分子束外延GaAs(331)A表面形貌演化[J].光子学报,2008,37(6):1107-1111.
作者姓名:牛智红  任正伟  贺振宏
作者单位:1. 山西综合职业技术学院,轻工分院,太原,030013
2. 中国科学院半导体研究所,北京,100083
摘    要:研究了GaAs高指数面(331)A在原子氢辅助下分子束外延形貌的演化.原子力显微镜测试表明:在常规分子束外延情况下,GaAs外延层台阶的厚度和台面的宽度随衬底温度的升高而增加,增加外延层厚度会导致台阶的密度和台面的宽度增加然后饱和.而在原子氢辅助分子束外延情况下,当GaAs淀积量相同时GaAs外延层台阶的密度增大宽度减小.认为这是由于原子氢的作用导致Ga原子迁移长度的减小.在GaAs(331)A台阶基底上生长出InAs自组织纳米线,用光荧光测试研究了其光学各项异性特征.

关 键 词:原子氢  分子束外延  高指数面
收稿时间:2007-11-20
修稿时间:2008-01-08

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)
NIU Zhi-hong,REN Zheng-wei,HE Zhen-hong.Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)[J].Acta Photonica Sinica,2008,37(6):1107-1111.
Authors:NIU Zhi-hong  REN Zheng-wei  HE Zhen-hong
Abstract:Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.
Keywords:Atomic hydrogen  Molecular beam epitaxy  High index surface
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