硅基二氧化硅波导和SOI脊型波导应力双折射研究

采用有限元方法分析了硅基二氧化硅波导和SOI（Silicon on Insulator）脊型波导内部残留热应力引起的双折射.对于硅基二氧化硅波导，应力双折射系数的数量级为10－4，对于上包层为空气的SOI脊型波导，该系数的数量级为10－5，对于上包层为SiO2的SOI脊型波导，该系数的数量级为10－3，可见在硅基二氧化硅波导和上包层为SiO2的SOI脊型波导中产生了大的应力双折射，而在上包层为空气的SOI脊型波导中应力双折射较小.

Analysis of Stress Birefringence for Silica Waveguide on Silicon and SOI Rib Waveguide

The birefringence originated from the residual stress of the silica waveguide on the silicon and the SOI (Silicon on Insulator) rib waveguide is analyzed using the finite element method. It is found that the coefficient of the stress birefringence is of the order of 10 -4 for the silica waveguide on the silicon; the coefficient is of the order of 10 -5 and 10 -3 for the SOI rib waveguide covered by air and SiO-2 respectively.It can be seen that the large birefringence arise in the silica waveguide on the silicon and the SOI rib waveguide covered by the SiO-2 while there is small birefringence in the SOI rib waveguide covered by air.