| 选通式象增强器的新型导电基底 |
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| 引用本文： | 李佳,庞其昌,彭文达,李宏云,阎国安,高春建.选通式象增强器的新型导电基底[J].光子学报,2000,29(9):861-864. |
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| 作者姓名： | 李佳 庞其昌 彭文达 李宏云 阎国安 高春建 |
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| 作者单位： | 1. 中国科学院西安光学精密机械研究所,西安,710068
2. 西北核技术研究所,西安,710024 |
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| 摘 要： | 本文介绍了采用光刻技术制备的一种新型的导电基底,它的面电阻≤ 10Ω,透过率约为 89%.在该基底上研制出的选通式象增强器,可实现选通时间在 ns级以上的高速选通,适用于微光、瞬时多通道高速光谱分析系统和高速摄影系统.
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| 关 键 词： | 导电基底 光刻 选通 象增强器 |
| 收稿时间： | 2000-01-20 |
| 修稿时间： | 2000-01-20 |
GATABLE IMAGE INTENSIFIER WITH A NEW TYPE OF CONDUCT ELECTRICITY SUBSTRATE |
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| Li Jia,Pang Qichang,Peng Wenda,Li Hongyun,Yan Guoan,Gao Chunjian.GATABLE IMAGE INTENSIFIER WITH A NEW TYPE OF CONDUCT ELECTRICITY SUBSTRATE[J].Acta Photonica Sinica,2000,29(9):861-864. |
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| Authors: | Li Jia Pang Qichang Peng Wenda Li Hongyun Yan Guoan Gao Chunjian |
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| Institution: | 1. Xi′an Institute of Optics and Precision Mechanics, Xi′an 710068;2. Northwest Nuclear Technology Institute, Xi′an 710024 |
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| Abstract: | A new type of conduct electricity substrate made by photoetching technology is developed,which resistance is lower than 10Ω and transparency is about 89%.The gatable image intensifier with this substrate can meet the requirement of ns high-speed gating,is suitable for shimmer or transient multi-channel high-speed spectrum analysis system and high-speed camera system. |
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| Keywords: | Conduct electricity substrate Photoetching Gating Image intensifier |
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