| 透射式GaAs光电阴极抗光反射膜的研究 |
| |
| 引用本文： | 郭里辉,赛小锋,侯洵.透射式GaAs光电阴极抗光反射膜的研究[J].光子学报,1991,20(2):160-166. |
| |
| 作者姓名： | 郭里辉 赛小锋 侯洵 |
| |
| 作者单位： | 中国科学院西安光学精密机械研究所 710068
(郭里辉，赛小锋)，中国科学院西安光学精密机械研究所 710068(侯洵) |
| |
| 摘 要： | 本文计算了在透射式GaAs光电阴极的窗玻璃和GaAlAs缓冲层之间引入Si3N4或SiO2膜使光电阴极的入射光反射率所产生的变化,并测量了Si3N4膜、SiO2膜和SiO2/Si3N4复合膜对阴极反射率的影响。理论计算和测量表明,Si3N4膜和SiO2/Si3N4复合膜可有效地降低光电阴极对入射光的反射率。当Si3N4膜的厚度约为100nm时,可使光电阴极的反射率降低近60%。本文结果为科学地选择透射式GaAs光电阴极所需的的抗光反射膜提供了依据。
|
| 关 键 词： | 透射式GaAs光电阴极 Si3N4 抗光反射膜 反射率 |
| 收稿时间： | 1990-11-30 |
RESEARCH OF THE ANTI-REFLECTION FILM FOR TRANSMISSION MODE GaAs PHOTOCATHODES |
| |
| Guo Lihui,Sai Xiaofeng and Hou XunXian Institute of Optics and Precision Mechanics,Academia Sinica,Xian,P.R.China.RESEARCH OF THE ANTI-REFLECTION FILM FOR TRANSMISSION MODE GaAs PHOTOCATHODES[J].Acta Photonica Sinica,1991,20(2):160-166. |
| |
| Authors: | Guo Lihui Sai Xiaofeng and Hou XunXian Institute of Optics and Precision Mechanics Academia Sinica Xian PRChina |
| |
| Institution: | Guo Lihui,Sai Xiaofeng and Hou XunXian Institute of Optics and Precision Mechanics,Academia Sinica,Xian,710068,P.R.China |
| |
| Abstract: | The change of the reflectivity of transmission mode GaAs photocathodes has been calculated, which is caused by introducing Si3 N4 or SiO2 film between the input window glass and the GaAlAs buffer layer of the photocathodes. The effects of Si3 N4 .SiO2 and SiO2 /Si3N4 films on the reflectivity have also been measured. The results of the calculation and the measurements show that the Si3N4 film and the SiO2/Si3N4 multifilms can reduce the reflectivity efficiently. The reflectivity can be lowered 60%as the thinkness of Si3N4 is 100nm. Those results provide the basis to scientifically select the antireflection film for GaAs photocathodes. |
| |
| Keywords: | Transmission mode GaAs photocathode Anti-reflection film Reflectivity |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《光子学报》浏览原始摘要信息 |
| 点击此处可从《光子学报》下载免费的PDF全文 |
