| 透光导电ITO膜的制备及其光电特性的研究 |
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| 引用本文： | 周引穗,王俊,杨晓东,董庆彦,高爱华,胡晓云,陆治国.透光导电ITO膜的制备及其光电特性的研究[J].光子学报,2002,31(9):1077-1080. |
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| 作者姓名： | 周引穗 王俊 杨晓东 董庆彦 高爱华 胡晓云 陆治国 |
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| 作者单位： | 西北大学物理系,西安,710069 |
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| 摘 要： | 采用溶胶-凝胶方法制备ITO膜,并从制备工艺上研究了各种因素对ITO膜光电特性的影响.最后制出的ITO膜厚度约为50nm,在可见光区平均透射比达97%,最高达99.55%,电阻率在2.0Ω·cm左右,最低达到0.31Ω·cm.
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| 关 键 词： | ITO膜 溶胶-凝胶 光电特性 |
| 收稿时间： | 2002/6/11 |
| 修稿时间： | 2002年6月11日 |
OPTICAL AND ELECTRICAL PROPERTIES OF TRANSPARENT CONDUCTIVE ITO FILMS PREPARED BY SOL-GEL PROCESS |
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| Zhou Yinsui,Wang Jun,Yang Xiaodong,Dong Qingyan,Gao Aihua,Hu Xiaoyun,Lu Zhiguo.OPTICAL AND ELECTRICAL PROPERTIES OF TRANSPARENT CONDUCTIVE ITO FILMS PREPARED BY SOL-GEL PROCESS[J].Acta Photonica Sinica,2002,31(9):1077-1080. |
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| Authors: | Zhou Yinsui Wang Jun Yang Xiaodong Dong Qingyan Gao Aihua Hu Xiaoyun Lu Zhiguo |
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| Institution: | Zhou Yinsui,Wang Jun,Yang Xiaodong,Dong Qingyan,Gao Aihua,Hu Xiaoyun,Lu Zhiguo Department of Physics,Northwest University,Xi'an 710069,China |
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| Abstract: | The thin films of indium tin oxide(ITO)are applied extensively because of their high transparency(95% transmittance between 400nm and 600nm, 300nm thickness)and low electrical resistivity(the lowest around 10-3Ω·cm, 300nm thickness). Transparent and conductive ITO films had been prepared by the sol gel process, and the effects of every factor on the optical and electrical properties of the files had been investigated during the process. Optical transmittance of around 97% was observed in the visible region of the 50nm thick films, the maximum transmittance value was 99.55%. Resistivities of 2.0Ω·cm were obtained and the minimum resistivity value was 0.31Ω·cm. |
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| Keywords: | ITO films Sol gel Optical and electrical properties |
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