氧分压对电子束蒸发SiO2薄膜机械性质和光学性质的影响

采用ZYGO MarkⅢ-GPI数字波面干涉仪、NamoScopeⅢa型原子力显微镜对不同氧分压下电子束蒸发方法制备的SiO₂薄膜中的残余应力及表面形貌进行了研究, 结果发现：随着氧分压的增大, 薄膜中的压应力值逐渐减小, 最后变为张应力状态; 同时薄膜的表面粗糙度也随着氧分压的增大而逐渐增大. 另外, 折射率对氧分压也非常敏感, 随着氧分压的增大呈现出了减小的趋势. 这些现象主要是由于氧分压的改变使得SiO₂薄膜结构发生了变化引起的.

Influence of Oxygen Partial Pressure on the Mechanical and Optical Properties of SiO2 Films Prepared by Electron Beam Evaporation

Thin SiO_2 films have been deposited by electron beam evapouration method.The influences of oxygen partial pressure on the mechanical,surface morphology and optical properties were studied.The results show that the residual stress in the SiO_2 films varied from compressive stress to tensile stress with the oxygen partial pressure increase,which may be attributed to the evolution of the microstructure.At the same time,the surface roughness became larger and the refractive index decreased with the increase of the oxygen pressure.