| 极紫外投影光刻掩模的多层膜与照明误差 |
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| 引用本文： | 杨雄,金春水,张立超.极紫外投影光刻掩模的多层膜与照明误差[J].光子学报,2006,35(5):667-670. |
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| 作者姓名： | 杨雄 金春水 张立超 |
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| 作者单位： | 1. 中国科学院长春光学精密机械与物理研究所,长春,130033;中国科学院研究生院,北京,100039
2. 中国科学院长春光学精密机械与物理研究所,长春,130033 |
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| 基金项目： | 应用光学国家重点实验室资助项目 |
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| 摘 要： | 讨论了极紫外投影光刻掩模的反射光谱随多层膜参量的变化，通过曲线拟合得到了峰值反射率、带宽和中心波长与多层膜粗糙度、材料比值以及周期厚度的9个函数关系.模拟了6镜极紫外投影光刻系统的反射光谱，并计算了晶圆片处的相对照明强度.分析了由掩模在晶圆片处引入的照明误差，给出了照明误差的合成公式.
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| 关 键 词： | 薄膜光学 极紫外投影光刻 掩模 照明误差 |
| 收稿时间： | 2005-03-02 |
| 修稿时间： | 2005年3月2日 |
Multilayers on Extreme Ultraviolet Lithography Masks and Illumination Error |
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| Yang Xiong,Jin Chunshui,Zhang Lichao.Multilayers on Extreme Ultraviolet Lithography Masks and Illumination Error[J].Acta Photonica Sinica,2006,35(5):667-670. |
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| Authors: | Yang Xiong Jin Chunshui Zhang Lichao |
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| Institution: | 1 Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022 ;2 Graduate School of the Chinese Academy of Sciences ,Beijing 100039 |
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| Abstract: | The peak reflectivity, bandwidth and centroid wavelength of Extreme Ultraviolet Lithography (EUVL) Mask as a function of roughness, period thickness and thickness ratio of Mo/Si multilayers were calculated.Nine equations were obtained by fitting the calculated data. Then, the reflective spectrum of 6-mirror EUVL system were simulated, and calculation were performed to work out the relative illumination intensity at wafer plane. Finally, illumination uniformity error at wafer plane induced by the mask were analyzed, and resulted a formula for estimating the error. |
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| Keywords: | Film optics Extreme ultraviolet lithography Mask Illumination error |
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