| 光热位移光谱技术在GaTe特征参量测量中的应用 |
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| 引用本文： | 张振杰.光热位移光谱技术在GaTe特征参量测量中的应用[J].光子学报,1997,26(1):52-55. |
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| 作者姓名： | 张振杰 |
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| 作者单位： | 西北大学物理系!西安，710069 |
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| 摘 要： | 本文介绍光热位移光谱以及半导体GaTe的光热位移信号与调制频率之间的函数关系,这一复杂而特殊的关系可通过自由载流子的寿命和扩散效应去解释.
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| 关 键 词： | 热扩散长度 光热位移光谱 载流子寿命 带隙 |
| 收稿时间： | 1996-01-06 |
SENSITIVE PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY FOR GaTe PROPERTIES MEASURING |
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| Zhang Zhenjie.SENSITIVE PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY FOR GaTe PROPERTIES MEASURING[J].Acta Photonica Sinica,1997,26(1):52-55. |
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| Authors: | Zhang Zhenjie |
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| Institution: | Department of Physics, Northwest University, Xi’an 710069 |
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| Abstract: | In this paper, the photothermal displacement spectroscopy and the photothermaldisplacement response of Ga Te as a function of frequency is presented, and the anomalies in thisbehaviour are interpreted in terms of free carrier lifetime and diffusion effects. |
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| Keywords: | Thermal diffusion Photothermal displacement spectroscopy Carrier lifetime Band-gap |
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