| 加偏置电场的抛物量子阱中的电光效应 |
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| 引用本文： | 郭康贤.加偏置电场的抛物量子阱中的电光效应[J].光子学报,1998,27(6):494-498. |
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| 作者姓名： | 郭康贤 |
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| 作者单位： | 广州师范学院物理系 |
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| 摘 要： | 本文利用密度矩阵方法得到了加偏置电场的抛物量子阱中电光效应的解析表达式,并以典型的GaAs抛物量子阱为例进行了数值计算研究结果表明,电光效应随偏置电场和抛物势频率的增大而增强,同时也表明GaAs量子阱中的电光效应比体GaAs中的要强一个数量级以上。
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| 关 键 词： | 电光效应 抛物量子阱 |
| 收稿时间： | 1998-01-24 |
ELECTRO OPTIC EFFECTS IN ELECTRIC FIELD BIASED PARABOLIC QUANTUM WELLS |
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| Guo Kangxian,Chen Chuanyu.ELECTRO OPTIC EFFECTS IN ELECTRIC FIELD BIASED PARABOLIC QUANTUM WELLS [J].Acta Photonica Sinica,1998,27(6):494-498. |
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| Authors: | Guo Kangxian Chen Chuanyu |
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| Institution: | Guo Kangxian,Chen Chuanyu Department of Physics,Guangzhou Normal University,Guangzhou 510400,P.R.China |
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| Abstract: | Analytical expressions of electro-optic effects in electric field biased parabolic quantum wells are obtained by density matrix method.Numerical results are illustrated for a typical GaAs parabolic quantum well.It is found that the electro-optic effect increases with the enhancement of the applied electric field F and the parabolic confinement frequency ω0,and that the electro-optic effect in the GaAs parabolic quantum well is over 10 times larger than that in bulk GaAs. |
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| Keywords: | Electro optic effets Parabolic quantum wells |
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