| 有源半导体双稳放大器稳定性分析 |
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| 引用本文： | 李洪谱,曹明翠.有源半导体双稳放大器稳定性分析[J].光子学报,1994,23(3):278-283. |
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| 作者姓名： | 李洪谱 曹明翠 |
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| 作者单位： | 华中理工大学激光技术国家重点实验室 |
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| 摘 要： | 本文从半经典理论出发,对有源双稳放大器进行了稳定性分析,其结果表明:有源双稳器件远较无源器件易产生正沿不稳定性。在此基础上,我们讨论了有源E-P型双稳开关器件的实用开关速度的极限,实验中我们采用两个InGaAsP/InP双异质结单纵模激光器观察到了全光型开关现象。
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| 关 键 词： | 有源双稳放大器 不稳定性 |
| 收稿时间： | 1993-05-08 |
ANALYSIS ON THE STABILITY OF ACTIVE SEMICONGUCTOR BISTABLE AMPLIFIER |
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| LiHongpu,Cao Mingcui,Li Yinan,Luo Fengguang The National Laboratory on Laser Technotogy,Huazhong University of Science and Technology,Wuhan.ANALYSIS ON THE STABILITY OF ACTIVE SEMICONGUCTOR BISTABLE AMPLIFIER[J].Acta Photonica Sinica,1994,23(3):278-283. |
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| Authors: | LiHongpu Cao Mingcui Li Yinan Luo Fengguang The National Laboratory on Laser Technotogy Huazhong University of Science and Technology Wuhan |
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| Institution: | LiHongpu,Cao Mingcui,Li Yinan,Luo Fengguang The National Laboratory on Laser Technotogy,Huazhong University of Science and Technology,Wuhan,430074 |
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| Abstract: | This paper,an analysis of stability in the active semiconductor bistable amp-lifier based on the semiclassical model has been presented. It shows that the instabilityis much easier occured in the active device than in the passive device. Upon these ana-lysis, we discuss the practral switching speed of the active F-P type bistable switch.In experiment,the all-optical switch in InGaAsP/InP heterostructure laser amplifier are observed。 |
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| Keywords: | Active Amplifier Instablity |
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