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SiC1-xGex/SiC 异质结光电二极管特性的研究
引用本文:靳瑞英,陈治明,蒲红斌,隋晓红.SiC1-xGex/SiC 异质结光电二极管特性的研究[J].光子学报,2005,34(2):205-208.
作者姓名:靳瑞英  陈治明  蒲红斌  隋晓红
作者单位:西安理工大学电子工程系,西安,710048
基金项目:SupportedbytheNationalNaturalScienceFoundationof Chinaundergrantnumberof60376011
摘    要:使用二维器件模拟软件Medici, 对SiC1-xGex/SiC异质结的光电特性进行了模拟.设计了N型重掺杂SiC层的厚度为1 μm, P型轻掺杂SiC1-xGex层厚为0.4 μm, 二者之间形成突变异质结.在反向偏压3 V、光强度为 0.23 W/cm2的条件下, p-n+ SiC0.8Ge0.2/SiC和p-n+ SiC0.7Ge0.3/SiC敏感波长λ分别可以达到0.64 μm和0.7 μm, 光电流分别为7.765×10-7 A/μm和7.438×10-7 A/μm; 为了进一步提高SiC1-xGex/SiC 异质结的光电流, 我们把p-n+两层结构改进为p-i-n三层结构.在同样的偏压、光照条件下, p-i-n SiC0.8Ge0.2/SiC和p-i-n SiC0.7Ge0.3/SiC的光电流分别达到1.6734×10-6 A/μm和1.844×10-6 A/μm.

关 键 词:SiC1-xGex/SiC  异质结  吸收系数
收稿时间:2003-11-24

Photoelectric Characteristics of SiC1-xGex/SiC Heterojunction Diode
Abstract.Photoelectric Characteristics of SiC1-xGex/SiC Heterojunction Diode[J].Acta Photonica Sinica,2005,34(2):205-208.
Authors:Abstract
Institution:(Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048)
Abstract:Abstract Photoelectric characteristics of SiC1-xGex/SiC heterojunction diode were simulated using MEDICI tools, and the simulation results are presented and discussed in this letter. The abrupt heterojunction diode is composed of a 1 μm thick heavily doped n-type SiC layer and a 0.4 μm thick lightly doped p-type SiC1-xGex layer with varied composition ratios. It has been shown that photocurrent of the p- n+ SiC1-xGex/SiC diode is not decreased apparently by change the composition ratio from 0.2 to 0.3 for the applied reverse-bias voltage of 3 V and the incident light intensity of 0. 23 W/cm2.Corresponding photocurrents of the diodes are 7. 765 × 10 -7 A/μm and 7. 438 × 10-7 A/ μm, and the longest wavelength limits are 0.64 μm and 0.70 μm, respectively. It has also been shown by the simulation results that p-i-n structure composed by adding a p + -SiC1-xGex thin layer on top of the lightly doped p-type SiC1-xGex layer is much better for obtaining a higher photocurrent. Under the same conditions, photocurrents of 1. 6734 10-6 A/μm and 1. 844 × 10-6 A/μm can be obtained in the p-i-n SiC1-xGex/SiC diodes with x = 0.2 and 0.3, respectively.
Keywords:SiC_(1-x)  Ge_x/SiC  Heterojunction  Absorption coefficient
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