| 半绝缘GaAs光电导开关的超线性时间响应分析 |
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| 引用本文： | 李琦,张显斌,施卫.半绝缘GaAs光电导开关的超线性时间响应分析[J].光子学报,2002,31(9):1086-1089. |
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| 作者姓名： | 李琦 张显斌 施卫 |
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| 作者单位： | 西安理工大学自动化学院,西安,710048 |
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| 基金项目： | 国家自然科学基金、(No.5 0 0 770 1 7)，陕西省教育厅产业化培育项目 (No.0 1JK2 5 )，瞬态光学技术国家重点实验室开放基金 (No .YAK2 0 0 0 2 )资助项目 |
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| 摘 要： | 报道了用1064nm激光脉冲触发电极间隙为3mm的横向半绝缘GaAs 光导开关的实验结果.对半绝缘GaAs光电导开关的超线性时间响应特性做了分析,表明半绝缘GaAs材料EL2能级对电子和空穴的俘获截面有较大的差异,这种较大的差异造成开关对激光脉冲的超快响应.
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| 关 键 词： | 光电导开关 GaAs器件 超快时间响应 |
| 收稿时间： | 2002/1/11 |
| 修稿时间： | 2002年1月11日 |
ANALYSIS OF SEMI-INSULATING GaAs PHOTOCONDUCTIVE SWITCH ULTRA-LINEAR TIME RESPONSE |
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| Li Qi,Zhang Xianbin,Shi Wei Deparment of Automation Engineering,Xi'an University of Technology,Xi'an.ANALYSIS OF SEMI-INSULATING GaAs PHOTOCONDUCTIVE SWITCH ULTRA-LINEAR TIME RESPONSE[J].Acta Photonica Sinica,2002,31(9):1086-1089. |
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| Authors: | Li Qi Zhang Xianbin Shi Wei Deparment of Automation Engineering Xi'an University of Technology Xi'an |
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| Institution: | Li Qi,Zhang Xianbin,Shi Wei Deparment of Automation Engineering,Xi'an University of Technology,Xi'an 710048 |
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| Abstract: | Experiment on a 3mm gap semi insulate lateral GaAs PCSS's triggered by 1064nm laser pulse are reported .The property of ultra linear time response for Simi insulating GaAs photoconductive switches have been analyzed. The analysis indicates that the capture cross section of electron and hole for EL2 energy level have great difference, and this effected the switch's ultr Linear time response to laser pulse. |
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| Keywords: | Photoconductive switch GaAs switches Ultr linear time response |
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