| 用直接模拟法分析量子阱半导体激光器瞬态响应 |
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| 引用本文： | 张晓霞,潘炜.用直接模拟法分析量子阱半导体激光器瞬态响应[J].光子学报,2000,29(7):651-653. |
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| 作者姓名： | 张晓霞 潘炜 |
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| 作者单位： | 西南交通大学计算机与通信工程学院, 成都610031 |
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| 基金项目： | 铁道部科技发展计划(97×21);四川省青年科技基金 |
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| 摘 要： | 根据光增益与载流子密度的对数关系,通过适应于多量子阱激光器的速率方程的直接模拟分析,得到了注入电流、阱数和腔长对多量子阱激光器的激射阈值、开关延迟时间、弛豫振荡频率和光输出等参量之间的依赖关系.运用相图确立了在瞬态过程中,载流子数密度和光子数密度之间的转化过程.从而为改善量子阱激光器的高频调制特性以及优化设计器件结构参数提供了理论依据.
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| 关 键 词： | 多量子阱激光器 瞬态响应 增益饱和 相图 |
| 收稿时间： | 1999-12-16 |
ANALOGOUS ANALYSIS OF TRANSIENT RESPONSE CHARACTERISTICS FOR QUANTUM-WELL LASERS |
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| Zhang Xiaoxia,Pan Wei,Luo Bin,Lu Hongchang,Chen Jianguo.ANALOGOUS ANALYSIS OF TRANSIENT RESPONSE CHARACTERISTICS FOR QUANTUM-WELL LASERS[J].Acta Photonica Sinica,2000,29(7):651-653. |
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| Authors: | Zhang Xiaoxia Pan Wei Luo Bin Lu Hongchang Chen Jianguo |
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| Institution: | Southwest Jiaotong University, Chengdu 610031, CHN |
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| Abstract: | Based on changing the logarithmic relation of gain on carrier density,a simple rate equation formula is derived for MQW lasers.Described an analysis for transient response characteristics of MQW lasers.We have got the relation of current,well numbers and cavity length on threshold,turn on delay,relaxation oscillations frequency and output power.The result is benefit of semiconductor MQW lasers both in theoretical analysis and device structures. |
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| Keywords: | MQW lasers Transient response Gain saturation Phase diagram |
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