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SiGe/Si多量子阱中的光致子带间吸收研究
引用本文:吴兰.SiGe/Si多量子阱中的光致子带间吸收研究[J].光子学报,2001,30(6):704-708.
作者姓名:吴兰
作者单位:浙江大学现代光学仪器国家重点实验室,杭州 310027
基金项目:浙江大学曹光彪高科技发展基金,国家教育部留学回国人员科研启动基金资助项目
摘    要:本文论述了硅锗量子阱中的光致子带间吸收的机理,并在实验中探测SiGe/Si量子阱价带间的红外光致吸收.载流子由氩离子激光器作为光泵浦源产生,所导致的红外吸收由一个步进式傅里叶变换光谱仪来探测.在硅锗量子阱中的光致吸收有两个来源:类似单一掺杂的SiGe薄层的体吸收的自由载流子吸收,及量子阱价带的子带间吸收.实验探测了TE和TM偏振方向的吸收.TM偏振方向的吸收是由偏离布里渊带中心的载流子的跃迁所造成的.我们认为这种光致吸收技术在研究价带耦合效应及其对子带间吸收的影响是非常有效的.

关 键 词:硅锗量子阱  光致子带间吸收  自由载流子吸收
收稿时间:2000-06-09
修稿时间:2000年6月9日

PHOTO-INDUCED INTERSUBBAND ABSORPTION IN THE SiGe/Si MULTIPLE QUANTUM WELLS
Wu Lan State Key Laboratory of Modern Optical Instrumentation,Zhejiang University,Hangzhou.PHOTO-INDUCED INTERSUBBAND ABSORPTION IN THE SiGe/Si MULTIPLE QUANTUM WELLS[J].Acta Photonica Sinica,2001,30(6):704-708.
Authors:Wu Lan State Key Laboratory of Modern Optical Instrumentation  Zhejiang University  Hangzhou
Institution:Wu Lan State Key Laboratory of Modern Optical Instrumentation,Zhejiang University,Hangzhou 310027
Abstract:In this paper,the mechanism of photo induced intersubband absorption (PIA) in SiGe multiple quantum wells (QWs) is discussed PIA in the valence band of Si/SiGe QWs is investigated Carriers are optically generated in the QWs using an argon ion laser The resulting infrared absorption is probed with a step scan Fourier transform infrared spectrometer The photo induced infrared absorption in SiGe quantum wells is dominated by two contributions:the free carrier absorption,which is similar to bulk absorption in a uniformly doped SiGe layer,and the valence intersubband absorption in the QWs Both TM and TE polarized intersubband absorptions are measured The TE polarized intersubband absorptions process is attributed to carriers away from the Brillouin zone center Result show that the photo induced technique is appropriate to study valence band mixing effects and their influence on intersubband absorption
Keywords:SiGe quantum wells  Photo  induced intersubband absorption  Free carrier absorption
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