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硅基1.55 μm可调谐共振腔窄带光电探测器的研究
引用本文:毛容伟,成步文,李传波,左玉华,滕学公,罗丽萍,余金中,王启明.硅基1.55 μm可调谐共振腔窄带光电探测器的研究[J].光子学报,2005,34(12):1783-1787.
作者姓名:毛容伟  成步文  李传波  左玉华  滕学公  罗丽萍  余金中  王启明
作者单位:中国科学院半导体研究所集成光电子学国家重点实验室,北京,100083
基金项目:国家重点基础研究发展规划(973项目,No.G2000036603)、863项目(No.2002AA312010)和国家自然科学基金(No.90104003,60376025,60336010,60223001)资助
摘    要:制作了一种低成本硅基1.55 μm可调谐共振腔增强型探测器.首次获得硅基长波长可调谐共振腔探测器的窄带响应,共振峰量子效率达44%,峰值半高宽为12.5nm,调谐范围14.5nm,并且获得1.8 GHz的高频响应.本制作工艺不复杂,成本低,有望用于工业生产.

关 键 词:共振腔增强型探测器  介质键合  InGaAs  可调谐  高频响应
收稿时间:2004-09-16
修稿时间:2004年9月16日

The Fabrication of Low Cost Si-based Continuously Tunable 1.55μm RCE Photodetector
Mao Rongwei,Chen Buwen,Li Chuanbo,Zuo Yuhua,Teng Xuegong,Luo Liping,Yu Jinzhong,Wang Qiming.The Fabrication of Low Cost Si-based Continuously Tunable 1.55μm RCE Photodetector[J].Acta Photonica Sinica,2005,34(12):1783-1787.
Authors:Mao Rongwei  Chen Buwen  Li Chuanbo  Zuo Yuhua  Teng Xuegong  Luo Liping  Yu Jinzhong  Wang Qiming
Institution:State Key Joint Laboratory of Integrated Optoelectronics , Institute of Semiconductors, Chinese Academy of Sciences ,Beijing 100083
Abstract:A novel method for fabricating low cost Si-based continuously tunable long wavelength resonant cavity enhanced (RCE) photodetectors was reported,in which InGaAs epitaxy layers were bonded to silicon substrates without any special treatment on bonding surfaces,employing the silicate gel as bonding medium.A thermally tunable Si-based InGaAs RCE photodetector operating at 1.3~1.6 μm was obtained,with a quantum efficiency of about 44% at the resonant wavelength of about 1.5 μm and a FWHM of about 12.5 nm.A tuning range of 14.5 nm and a 3 dB bandwidth of 1.8 GHz were obtained. This device was fabricated with traditional processes,thus the cost was decreased. It demonstrates a great potential for industry processes.
Keywords:Resonant cavity enhanced photodetector  RCE  Medium bonding  InGaAs  Tunable  High frequency response
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