| B+注入HgCdTe外延材料的红外透射光谱分析 |
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| 引用本文： | 王庆学,魏彦锋,朱建妹,杨建荣,何力.B+注入HgCdTe外延材料的红外透射光谱分析[J].光子学报,2005,34(8):1179-1182. |
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| 作者姓名： | 王庆学 魏彦锋 朱建妹 杨建荣 何力 |
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| 作者单位： | 中国科学院上海技术物理研究所半导体材料与器件研究中心,上海,200083 |
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| 基金项目： | 国家自然科学基金委创新研究群体科学基金（60221502）资助 |
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| 摘 要： | 运用多层模型和膜系传递矩阵以及非线性二乘法，模拟了B+注入碲镉汞外延材料的红外透射光谱，结果表明B+注入碲镉汞外延材料的红外透射光谱能够很好地理论再现，并由此获得了结区的自由载流子浓度分布、迁移率、面自由载流子浓度以及折射率和消光系数等相关参量，所得结果与微分Hall法测试的结果是一致的.计算结果也表明B+注入HgCdTe导致红外透射率变化的根本原因是注入层的高载流子浓度的等离子效应改变了该层的折射率和消光系数.
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| 关 键 词： | 离子注入 碲镉汞外延材料 红外光谱 载流子浓度分布 |
| 收稿时间： | 2004-06-22 |
| 修稿时间： | 2004年6月22日 |
Infrared Transmission Spectroscopy of B+ implanted HgCdTe Epilayers |
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| Wang Qingxue,Wei Yanfeng,Zhu Jianmei,Yang Jianrong,He Li.Infrared Transmission Spectroscopy of B+ implanted HgCdTe Epilayers[J].Acta Photonica Sinica,2005,34(8):1179-1182. |
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| Authors: | Wang Qingxue Wei Yanfeng Zhu Jianmei Yang Jianrong He Li |
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| Institution: | (Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics,
Chinese Academy of Sciences, Shanghai 200083 )
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| Abstract: | The calculation method of infrared transmission spectroscopy of boron-implanted HgCdTe epilayers was proposed based on multilayer model, transfer matrix and nonlinear least squares method. The results show that the transmission spectra of HgCdTe epilayers can be fitted very well by the theoretical calculation curves. By fitting, the carrier concentration, the mobility, the sheet carrier concentration, the refractive index and the extinction coefficient in B+ implanted zone are obtained. These parameters are consistent with those obtained from different Hall measurement before. The effect of B+ implantation on the transmission spectra of HgCdTe epilayers mainly comes from the changes of the refractive index and the extinction coefficient of HgCeTe material in B+ implanted zone. |
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| Keywords: | Implantation HgCdTe epilayers Infrared spectroscopy Carrier concentration |
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