大面积高深宽比硅微通道板阵列制作

利用光辅助电化学刻蚀方法,在厚度为425μm的5英寸硅片上,制作成深宽比达50以上的微通道板阵列结构.理论分析了影响微孔阵列形貌形成的关键因素,并结合实验条件,通过调整刻蚀电压值和根据莱曼模型修正实验电流值得到理想的孔壁形貌.结果表明,相比于目前在硅基上制作高深宽微结构的几种技术,光辅助电化学刻蚀方法能够实现孔壁光滑、面积大和深宽比高的微通道板阵列结构的低成本制作.

Fabrication of Silicon-based Micro Pore Array with Large-area and High Aspect-ratio by Photo-electrochemical Etching

The micro pore array with the feature of aspect ratio of more than 50 was fabricated on a 5-inch silicon wafer by means of photo-assisted electrochemical etching technique. After analyzing the factors that determine the morphology of pores, the following experiments were proceeded to study the relation of pore morphology to the etching voltage and electric current. When choosing a current by i-V curve, several different etching voltages were applied respectively and corresponding wafer was fabricated by adjusting experimental parameters according to the Lehmann's model. It was found that the better pores could be produced under a voltage of 2 V. The results show that photo-assisted electrochemical etching technique can be more adopted to make the large area micro-pore array of high aspect-ratio on silicon wafer with low cost, being compared to the state of the art of micro-manufacturing technology.