一维掺杂光子晶体嵌入负介电常数材料和负磁导率材料的性质

对一维掺杂光子晶体嵌入负介电常数材料和负磁导率材料中缺陷模的透射性质进行了研究.利用转移矩阵方法,分别计算了负介电常数材料和负磁导率材料的反射相位谱和一维掺杂光子晶体的透射相位谱.研究发现,在特定条件下,负介电常数材料和负磁导率材料的反射相位以及一维掺杂光子晶体的往返透射相位之和是0或者2π的整数倍.这样的研究结果表明,在满足一定的条件下,一维掺杂的光子晶体嵌入负介电常数材料和负磁导率材料中后,无论杂质的厚度多大,在光子带隙中仅出现一个缺陷模.而且,由于负介电常数材料和负磁导率材料性质的限制,单个缺陷模的品质因子会大大提高.

Properties of One-dimensional Doped Photonic Crystals Surrounded by an ε-negative Layer and a μ-negative Layer

The transmission properties of defect modes for a doped one-dimensional photonic crystal (1DPC) surrounded by an  μ-negative layer and a  μ-negative layer are studied. The reflection phase spectra of  μ-negative and a  μ-negative media and the transmission phase spectra of the doped 1DPC are calculated by means of the transfer matrix method. It is found that the sum of the reflection phases of  μ-negative and a  μ-negative layers and the double transmission phases of the doped 1DPC under special conditions are zero or integer multiple of 2π.The results show that only one defect mode appears in the photonic gap when the doped 1DPC surrounded by an μ--negative layer and a  μ-negative layer, regardless of the thickness of the defect. Moreover, the quality factor of the single defect mode is enhanced greatly due to the confinement effect of the  ε-and  μ-negative layers.