InGaAs近红外相机电路设计与实现

随着国外0.9～1.7μm InGaAs近红外相机的迅速发展,目前已被大量应用于工业和军事领域。探讨了InGaAs近红外相机在不同领域的应用,分析了InGaAs材料的优势及探测器选型。结合相应的探测器阵列,从相机偏置电压产生、时序驱动设计与制冷控制等方面给出了InGaAs近红外相机的硬件电路设计方案,解决了研制过程中的部分重难点,并针对后期图像处理进行了仿真验证,达到应用要求。

Design and Implementation of Circuit for InGaAs Near-Infrared Camera

0.9-1.7μm InGaAs near-infrared cameras have quickly developed, and are widely used in industry and military field in foreign countries. In this paper, the applications of lnGaAs near-infrared camera in various fields are presented and advantages of In（;aAs material are analyzed. Based on corresponding detector array, the design and implementation of circuit for ln（;aAs near-infrared camera is put forward, including bias voltage produce, timing-driven design, cooling control and hardware： architecture. Simulation verification is introduced in view of the image post-processing.