532nm连续激光晶化非晶硅薄膜的原位拉曼光谱研究

用磁控溅射制备了非晶硅薄膜,用波长为532 nm的连续激光退火和显微Raman光谱原位测试技术和场发射扫描电子显微镜研究了非晶硅薄膜在不同激光功率密度和不同扫描速度下的晶化状态。结果表明,激光照射时间10 s,激光功率密度大于2.929×105W/cm2时,能实现非晶硅薄膜晶化。在激光功率密度为5.093×105W/cm2,扫描速度为10 mm/s时非晶硅开始向多晶硅转化。在5.093×105W/cm2的功率密度下,以1.0 mm/s的扫描速度退火非晶硅薄膜,得到的晶粒直径为740 nm。

In-situ Raman Spectroscopic Study on the Crystallization of Amorphous Silicon Thin Films with a 532nm Continuous-wave Laser

Amorphous silicon thin films were prepared by magnetron sputtering and crystallization of the films by a 532 nm continuous-wave laser under different power densities and scan speeds was studied by in-situ micro-Raman spectroscopic measurements and field emission scanning electron microscope.It is shown that the amorphous Si films are able to crystallize within 10 s at laser power densities above 2.929×105 W/cm2.The amorphous Si starts to transform to polycrystalline Si at 10 mm/s scan speed under illumination of 5.093×105 W/cm2 laser power density.The crystal size around 740 nm was obtained at 1 mm/s scan speed with laser power density of 5.093×105 W/cm2.